Defect free zero oxide encroachment process for semiconductor fa

Details Defect free zero oxide encroachment process for semiconductor fa Defect free zero oxide encroachment process for semiconductor fa

1982-05-20

1983-08-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29580, 156646, 156649, 156653, 156657, 1566591, 156662, 204192E, 357 56, 427 94, 427 95, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

043989926

ABSTRACT:
A method for local oxideation of a semiconductor using only conventional large scale integration (LSI) fabrication techniques is provided which results in an oxide layer without the formation of the so-called "bird's beak" structure and no process or structure induced defects. On a semiconductor substrate a mold for oxide is made by forming on the substrate, a trench with sidewalls extending upward to a localized mesa region of the substrate. The sidewalls of the mesa, the localized plateau and a distance out from the sidewalls of the mesa to a desired distance out from the sidewalls are covered by a masking layer capable of preventing oxideation of the underlying substrate. The unmasked portion of the mold is oxidized to produce a localized oxide layer which is substantially free of any "bird's beak" structure.

REFERENCES:
patent: 3958040 (1976-05-01), Webb
patent: 4333964 (1982-06-01), Ghezzo
patent: 4356056 (1982-10-01), Cornette et al.
patent: 4361600 (1982-11-01), Brown

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