Defect-free thin and planar film processing

Details Defect-free thin and planar film processing Defect-free thin and planar film processing

2005-09-13

2005-09-13

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S678000

Reexamination Certificate

active

06943112

ABSTRACT:
The process of the present invention forms copper interconnects in a semiconductor wafer surface. During the process, initially, narrow and large features are provided in the top surface of the wafer, and then a primary copper layer is deposited by employing an electrochemical deposition process. The primary copper layer completely fills the features and forms a planar surface over the narrow feature and a non-planar surface over the large feature. By employing an electrochemical mechanical deposition process, a secondary copper layer is deposited onto the primary copper layer to form a planar copper layer over the narrow and large features. After this process step, the thickness of the planar copper layer is reduced using an electropolishing process.

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