Defect-free source/drain extensions for MOSFETS having...

Details Defect-free source/drain extensions for MOSFETS having... Defect-free source/drain extensions for MOSFETS having...

2007-09-29

2009-06-09

Pham, Hoai V. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257SE21060, C257SE27062

Reexamination Certificate

active

07545003

ABSTRACT:
A process for forming defect-free source and drain extensions for a MOSFET built on a germanium based channel region deposits a first silicon germanium layer on a semiconductor substrate, deposits a gate dielectric layer on the silicon germanium layer, and deposits a gate electrode layer on the gate dielectric layer. A dry etch chemistry etches those layers to form a gate electrode, a gate dielectric, and a silicon germanium channel region on the semiconductor substrate. Next, an ion implantation process forms halo implant regions that consume portions of the silicon germanium channel region and the semiconductor substrate. Finally, an in-situ doped epitaxial deposition process grows a pair of silicon germanium layers having LDD regions. The silicon germanium layers are adjacent to the silicon germanium channel region and the halo implant regions do not damage any portion of the silicon germanium layers.

REFERENCES:
patent: 7119369 (2006-10-01), Wang et al.

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