Defect detection system

Optics: measuring and testing – Surface roughness

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C356S243400

Reexamination Certificate

active

06862096

ABSTRACT:
Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles. Intensity of scattering is measured when the surface is illuminated sequentially by S- and P-polarized radiation and compared to distinguish between micro-scratches and particles. Representative films may be measured using profilometers or scanning probe microscopes to determine their roughness and by the above-described instruments to determine haze in order to build a database. Surface roughness of unknown films may then be determined by measuring haze values and from the database.

REFERENCES:
patent: 4314763 (1982-02-01), Steigmeier et al.
patent: 4378159 (1983-03-01), Galbraith
patent: 4391524 (1983-07-01), Steigmeier et al.
patent: 4423331 (1983-12-01), Koizumi et al.
patent: 4479714 (1984-10-01), Lehrer
patent: 4508450 (1985-04-01), Ohshima et al.
patent: 4523841 (1985-06-01), Brunsting et al.
patent: 4526468 (1985-07-01), Steigmeier et al.
patent: 4598997 (1986-07-01), Steigmeier et al.
patent: 4735504 (1988-04-01), Tycko
patent: 4744663 (1988-05-01), Hamashima et al.
patent: 4794265 (1988-12-01), Quackenbos et al.
patent: 4893932 (1990-01-01), Knollenberg
patent: 4898471 (1990-02-01), Stonestrom et al.
patent: 4929845 (1990-05-01), Amir et al.
patent: 5076692 (1991-12-01), Neukermans et al.
patent: 5108176 (1992-04-01), Malin et al.
patent: 5189481 (1993-02-01), Jann et al.
patent: 5198869 (1993-03-01), Monteverde et al.
patent: 5218417 (1993-06-01), Gay et al.
patent: 5270794 (1993-12-01), Tsuji et al.
patent: 5315609 (1994-05-01), Tanaka et al.
patent: 5377001 (1994-12-01), Malin et al.
patent: 5377002 (1994-12-01), Malin et al.
patent: 5389794 (1995-02-01), Allen et al.
patent: 5406367 (1995-04-01), Sopori
patent: 5416594 (1995-05-01), Gross et al.
patent: 5424838 (1995-06-01), Siu
patent: 5464779 (1995-11-01), Fujimaki
patent: 5530550 (1996-06-01), Nikoonahad et al.
patent: 5650614 (1997-07-01), Yasutake et al.
patent: 5677765 (1997-10-01), Laird et al.
patent: 5744215 (1998-04-01), Neuman
patent: 5798829 (1998-08-01), Vaez-Iravani et al.
patent: 5798831 (1998-08-01), Hagiwara
patent: 5864394 (1999-01-01), Jordan, III et al.
patent: 6104945 (2000-08-01), Modell et al.
patent: 6201601 (2001-03-01), Vaez-Iravani et al.
patent: 6271916 (2001-08-01), Marxer et al.
patent: 6538730 (2003-03-01), Vaez-Iravani et al.
patent: 63-14830 (1988-01-01), None
patent: 63-140904 (1988-06-01), None
patent: 62-85449 (1998-11-01), None
patent: 9615354 (1996-09-01), None
patent: WO 0000873 (2000-01-01), None
patent: WO 0000874 (2000-01-01), None
patent: WO 0002037 (2000-01-01), None
“Requirements for Future Surface Inspection Equipment for Bare Silicon Surfaces,” P. Wagner et al., Wacker-Chemitronic GmbH, Burghausen, Germany, W. Baylies, BayTech Group, Weston Massachusetts.
“The Importance of Media Refractive Index in Evaluating Liquid and Surface Microcontamination Measurements,” R. Knollenberg et al.,The Journal of Environmental Sciences, Mar./Apr. 1987.
“Surface Inspection System for Estimation of Wafer,” Y. Yatsugake et al.,Hitachi Engineering Technical Report, vol. 11, Jan. 1996, pp. 21-26 (with translation).
Figure, Hitachi Electronics Engineering Co., Ltd., presented by Etsuro Morita of Mitsubishi Materials Silicon Corp. in a presentation entitled “Exploration of COP and COP Defect Crystal Originated 'Particles'.” at the 6thInternational Workshop on 300 mm wafers on Dec. 5, 1996 in Makuhari. Japan.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Defect detection system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Defect detection system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Defect detection system will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3447141

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.