Defect detection method of semiconductor wafer patterns

Details Defect detection method of semiconductor wafer patterns Defect detection method of semiconductor wafer patterns

1987-03-23

1988-10-18

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 30, 356237, 356394, G03C 500

Patent

active

047787457

ABSTRACT:
A method of detecting opaque defects on a reticle used to define die patterns during semiconductor device fabrication in which a comparison is made of reflected light levels between an image die containing the developed photo-sensitive resist of a top layer with a reference die which contains only previously formed layers. The comparison is limited to areas of the device where there is no image pattern formed by the resist. A defect is detected whenever there is a difference in the recorded levels detected during the comparison.

REFERENCES:
patent: 4586822 (1986-05-01), Tanimoto
patent: 4637714 (1987-01-01), Flamholz
patent: 4641353 (1987-02-01), Kobayashi
patent: 4718767 (1988-01-01), Hazawa

Affiliated with

Also associated with

Rating

Defect detection method of semiconductor wafer patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Defect detection method of semiconductor wafer patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Defect detection method of semiconductor wafer patterns will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1194699