Defect detection and thickness mapping of the passivation layer(

Details Defect detection and thickness mapping of the passivation layer( Defect detection and thickness mapping of the passivation layer(

1987-06-15

1988-10-11

Fields, Carolyn E.

Radiant energy

Inspection of solids or liquids by charged particles

Methods

250310, 250306, G01N 23225

Patent

active

047773642

ABSTRACT:
A narrow, high energy, electron beam is caused to impinge upon an integrated circuit. The accelerating voltage of the electron beam is increased until the electrons have just enough energy to penetrate through the thickness of the passivation layer (SiO.sub.2). The accelerating voltage is then increased a predetermined amount (3-5 KeV) above the voltage required for passivation layer penetration. The transmitted electrons interact with the sublayer of film material (Al) to generate distinct X-rays. The increased-intensity electron beam is x/y or raster scanned over the area of interest of the IC chip. The X-ray intensities generated during the raster scan are detected and stored (e.g., in a RAM). After a complete scan of the area of interest, the X-ray intensities are read out of store and visually displayed on a CRT. Through correlation of measured and predicted X-ray intensities, a scanning thickness mapping is available for display/quantitative analysis of the thickness profile of a passivation layer.

REFERENCES:
patent: 3376419 (1968-04-01), Schumacher
Conference on "Scanning Electron Microscopy", Techniques for Sectioning Mocircuit Metallization, Hackett, 1976, pp. 579-586.
"Determination of KeV Electron Energy Dissipation vs. Penetration Distance in Solid Materials", by T. E. Everhart and P. H. Hoff, Journal of Applied Physics, vol. 42, No. 13, Dec. 1971, pp. 5837-5846.

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