Defect control in formation of dielectrically isolated semicondu

Details Defect control in formation of dielectrically isolated semicondu Defect control in formation of dielectrically isolated semicondu

1995-06-07

1998-05-12

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438406, 438938, H01L 2176

Patent

active

057504326

ABSTRACT:
Oxygen induced lattice slip defects are reduced in device layer 26 of silicon-on-insulator structure 12, 16, 26. At the bottom of trenches 22 notches 28 are etched into the dielectric layer 16. A thermal oxide process provides protrusions 30 of oxide into the substrate. The protrusions 30 direct defects into the support layer 12.

REFERENCES:
patent: 3966577 (1976-06-01), Hochberg
patent: 5084408 (1992-01-01), Baba et al.
patent: 5372952 (1994-12-01), Aronowitz et al.
patent: 5416041 (1995-05-01), Schwalke

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