Deep trench with enhanced sidewall surface area

Details Deep trench with enhanced sidewall surface area Deep trench with enhanced sidewall surface area

1997-06-17

2000-01-18

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257510, 438243, 438386, 438424, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060159855

ABSTRACT:
The present invention includes a method and system to increase the deep trench sidewall surface area in a storage node on a DRAM chip. By tilting the trenches the capacitance is increased without taking up more space on the semiconductor chip.

REFERENCES:
patent: 4584762 (1986-04-01), Soclof
patent: 5336912 (1994-08-01), Ohtsuki

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