Deep trench super switch device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S330000, C257S331000

Reexamination Certificate

active

11141865

ABSTRACT:
A deep trench super switch device has a plurality of trenches, each of the trenches containing a gate electrode polysilicon layer on top of a plurality of stacked conductive floating polysilicon layers, the remainder of each of the trenches being filled with a nonconductive material.

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