Deep trench process

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

1566461, 1566431, H01L 21302

Patent

active

056056036

ABSTRACT:
A high yield process for creating uniform deep trenches in a crystalline silicon substrate is disclosed. The process involves immobilizing a crystalline silicon substrate on an electrostatic chuck in a plasma etching apparatus, heating the silicon substrate by raising the cathode temperature to 30.degree. to 80.degree. C., exposing the silicon substrate to a plasma generated from HBr, NF.sub.3, and O.sub.2 ; and carrying out a plasma etch with the temperature of the cathode held at 30.degree. to 80.degree. C.

REFERENCES:
patent: 4384918 (1983-05-01), Abe
patent: 4414057 (1983-11-01), Bourassa et al.
patent: 4717448 (1988-01-01), Cox
patent: 4771730 (1988-09-01), Tezuka
patent: 4886565 (1989-12-01), Koshiba et al.
patent: 4983253 (1991-01-01), Wolfe et al.
patent: 5155652 (1992-10-01), Logan et al.
patent: 5191506 (1993-03-01), Logan et al.
patent: 5255153 (1993-10-01), Nozawa et al.
patent: 5350479 (1994-09-01), Collins et al.
patent: 5378311 (1995-01-01), Nagayama et al.
patent: 5423941 (1995-06-01), Komura et al.
patent: 5470782 (1995-11-01), Schwalke et al.
"High Aspect Ratio Trench Etching", Bondur et al.; Proc SPIE--Int. Soc. Opt. Eng (1993); 1803 (Advanced Techniques for Integrated Circuit Processing II); Abstract Only.
Lii and Ng "Method for Magnetic Enhanced Reactive Ion Etch of Uniform Trench . . . " Research Disclosure 346, (1993).
Schwartz and Schaible "Reactive ion etching of silicon" J. Vac. Sci. Tech. 16, 410-413 (1979).
Bennett et al. "Silicon Trench Etching Using A Mixture Of A Fluorocarbon . . . " IBM Tech. Disc. Bull, 30, 337-338 (1988).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Deep trench process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deep trench process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deep trench process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1972314

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.