Deep trench formation in semiconductor device fabrication

Details Deep trench formation in semiconductor device fabrication Deep trench formation in semiconductor device fabrication

2006-09-05

2006-09-05

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S719000, C438S723000, C438S736000, C438S739000, C438S952000

Reexamination Certificate

active

07101806

ABSTRACT:
A method for etching a deep trench in a semiconductor substrate. The method comprises the steps of (a) forming a hard mask layer on top of the semiconductor substrate, (b) etching a hard mask opening in the hard mask layer so as to expose the semiconductor substrate to the atmosphere through the hard mask layer opening, wherein the step of etching the hard mask opening includes the step of etching a bottom portion of the hard mask opening such that a side wall of the bottom portion of the hard mask opening is substantially vertical, and (c) etching a deep trench in the substrate via the hard mask opening.

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