Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-08-29
2011-12-20
Le, Thao (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000, C257SE21703, C257SE21396
Reexamination Certificate
active
08080851
ABSTRACT:
A semiconductor structure is disclosed. The semiconductor structure includes a bulk substrate of a first polarity type, a buried insulator layer disposed on the bulk substrate, an active semiconductor layer disposed on top of the buried insulator layer including a shallow trench isolation region and a diffusion region of the first polarity type, a band region of a second polarity type disposed directly beneath the buried insulator layer and forming a conductive path, a well region of the second polarity type disposed in the bulk substrate and in contact with the band region, a deep trench filled with a conductive material of the first polarity type disposed within the well region, and an electrostatic discharge (ESD) protect diode defined by a junction between a lower portion of the deep trench and the well region.
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Shiao-Shien Chen, et al., “Characteristics of Low-Leakage Deep-Trench Diode for ESD Protection Design in 0.18-um SiGe BiCMOS Process”, IEEE Transactions on Electron Devices, vol. 50, No. 7, Jul. 2003, pp. 1683-1689.
Barth, Jr. John E.
Bernstein Kerry
Alexanian Vazken
Cantor & Colburn LLP
International Business Machines - Corporation
Jones Eric
Le Thao
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