Deep trench dram process on SOI for low leakage DRAM cell

Details Deep trench dram process on SOI for low leakage DRAM cell Deep trench dram process on SOI for low leakage DRAM cell

1994-09-26

1997-05-06

Tsai, H. Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438388, 438392, H01L 2170, H01L 2700

Patent

active

056270925

ABSTRACT:
A deep trench DRAM cell is formed on a silicon on isolator (SOI) substrate, with a buried strap formed by outdiffusion of dopant in associated trench node material, for providing an electrical connection between the trench node and the active area of a MOS transfer gate formed in the substrate adjacent the trench in an uppermost portion of the substrate.

REFERENCES:
patent: 4601779 (1986-07-01), Abernathey et al.
patent: 4694561 (1987-09-01), Lebowitz
patent: 4801988 (1989-01-01), Kenney
patent: 4839309 (1989-06-01), Easter et al.
patent: 4864375 (1989-09-01), Teng et al.
patent: 4914628 (1990-04-01), Nishimura
patent: 4914740 (1990-04-01), Kenney
patent: 4916524 (1990-04-01), Teng et al.
patent: 4918500 (1990-04-01), Inuishi
patent: 4939104 (1990-07-01), Pollack et al.
patent: 4963502 (1990-10-01), Teng et al.
patent: 4978634 (1990-12-01), Shen et al.
patent: 4984039 (1991-01-01), Douglas
patent: 5001526 (1991-03-01), Gotou
patent: 5025295 (1991-06-01), Kuesters et al.
patent: 5043778 (1991-08-01), Teng et al.
patent: 5055898 (1991-10-01), Beilstein, Jr. et al.
patent: 5057887 (1991-10-01), Yashiro et al.
patent: 5065273 (1991-11-01), Rajeevakumar
patent: 5105245 (1992-04-01), Riemenschneider et al.
patent: 5106777 (1992-04-01), Rodder
patent: 5216265 (1993-06-01), Anderson et al.
patent: 5234846 (1993-08-01), Chu et al.
patent: 5264716 (1993-11-01), Kenney
patent: 5309008 (1994-05-01), Watanabe
patent: 5331199 (1994-07-01), Chu et al.
patent: 5336912 (1994-08-01), Ohtsuki
patent: 5349218 (1994-09-01), Tadaki
patent: 5362663 (1994-11-01), Brauner et al.
patent: 5422294 (1995-06-01), Nohlo

Affiliated with

Also associated with

Rating

Deep trench dram process on SOI for low leakage DRAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deep trench dram process on SOI for low leakage DRAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deep trench dram process on SOI for low leakage DRAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2132172