Deep trench device with single sided connecting structure...

Details Deep trench device with single sided connecting structure... Deep trench device with single sided connecting structure...

2007-11-15

2009-11-17

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257SE29218, C257SE29346, C365S149000

Reexamination Certificate

active

07619271

ABSTRACT:
A deep trench device with a single sided connecting structure. The device comprises a substrate having a trench therein. A buried trench capacitor is disposed in a lower portion of the trench. An asymmetric collar insulator is disposed on an upper portion of the sidewall of the trench. A connecting structure is disposed in the upper portion of the trench, comprising an epitaxial silicon layer disposed on and adjacent to a relatively low portion of the asymmetric collar insulator and a connecting member disposed between the epitaxial silicon layer and a relatively high portion of the asymmetric collar insulator. A conductive layer is disposed between the relatively high and low portions of the asymmetric collar insulator, to electrically connect the buried trench capacitor and the connecting structure. A cap layer is disposed on the connecting structure. A fabrication method for a deep trench device is also disclosed.

REFERENCES:
patent: 6423607 (2002-07-01), Heineck et al.
patent: 6936879 (2005-08-01), Furukawa et al.
patent: 6989560 (2006-01-01), Koike et al.
patent: 2008/0142862 (2008-06-01), Liao et al.

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