Deep-trench capacitor with hemispherical grain silicon...

Details Deep-trench capacitor with hemispherical grain silicon... Deep-trench capacitor with hemispherical grain silicon...

2006-03-07

2006-03-07

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000, C257S309000, C257SE29346

Reexamination Certificate

active

07009238

ABSTRACT:
A method for manufacturing a trench capacitor that includes providing a semiconductor substrate, forming a deep trench in the substrate, forming a thin sacrificial layer on a surface of the trench, and forming a hemispherical silicon grain layer over the thin sacrificial layer, wherein the sacrificial layer has a thickness to act as an etch stop during a subsequent step to remove at least a portion of the hemispherical silicon grain layer, and is electrically conductive.

REFERENCES:
patent: 5877061 (1999-03-01), Halle et al.
patent: 6177696 (2001-01-01), Bronner et al.
patent: 6297088 (2001-10-01), King
patent: 6448131 (2002-09-01), Cabral, Jr. et al.
patent: 6509599 (2003-01-01), Wurster et al.
patent: 6555430 (2003-04-01), Chudzik et al.
patent: 6613642 (2003-09-01), Rahn et al.
patent: 6770526 (2004-08-01), Chudzik et al.
patent: 6806138 (2004-10-01), Cheng et al.
patent: 6841443 (2005-01-01), Temmler et al.
patent: 2002/0072171 (2002-06-01), Forster et al.
patent: 2003/0064591 (2003-04-01), Lutzen et al.
patent: 2004/0079979 (2004-04-01), Lee et al.

Affiliated with

Also associated with

Rating

Deep-trench capacitor with hemispherical grain silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deep-trench capacitor with hemispherical grain silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deep-trench capacitor with hemispherical grain silicon... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3526129