Deep-trench capacitor with hemispherical grain silicon...

Details Deep-trench capacitor with hemispherical grain silicon... Deep-trench capacitor with hemispherical grain silicon...

2005-02-01

2005-02-01

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S558000, C438S923000, C257SE21149

Reexamination Certificate

active

06849529

ABSTRACT:
A method for manufacturing a trench capacitor that includes providing a semiconductor substrate, forming a deep trench in the substrate, forming a thin sacrificial layer on a surface of the trench, and forming a hemispherical silicon grain layer over the thin sacrificial layer, wherein the sacrificial layer has a thickness to act as an etch stop during a subsequent step to remove at least a portion of the hemispherical silicon grain layer, and is electrically conductive.

REFERENCES:
patent: 20030064591 (2003-04-01), Lutzen et al.

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