Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Stark, Jarrett J (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27092, C257SE21647, C438S243000
Reexamination Certificate
active
07989865
ABSTRACT:
A semiconductor structure is disclosed. The semiconductor structure includes an active semiconductor layer, a semiconductor device having a gate disposed on top of the active semiconductor layer, and source and drain regions and a body/channel region disposed within the active semiconductor layer, an insulator layer having a first and second side, the first side being adjacent to the active semiconductor layer, a substrate disposed adjacent to the second side of the insulator layer, a deep trench capacitor disposed under the body/channel region of the semiconductor device. The deep trench capacitor electrically connects with and contacts the body/channel region of the semiconductor device, and is located adjacent to the gate of the semiconductor device. The semiconductor structure increases a critical charge Qcrit, thereby reducing a soft error rate (SER) of the semiconductor device.
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Barth, Jr. John Edward
Bernstein Kerry
Cannon Ethan Harrison
White Francis Roger
Alexanian Vazken
Cantor & Colburn LLP
International Business Machines - Corporation
Stark Jarrett J
Tynes, Jr. Lawrence
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