Deep trench capacitor and method of making same

Details Deep trench capacitor and method of making same Deep trench capacitor and method of making same

2007-06-25

2010-10-12

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S302000, C257S306000, C257S311000, C438S242000, C438S243000, C438S253000, C438S302000, C716S030000, C716S030000

Reexamination Certificate

active

07812388

ABSTRACT:
A trench capacitor and method of forming a trench capacitor. The trench capacitor including: a trench in a single-crystal silicon substrate, a conformal dielectric liner on the sidewalls and the bottom of the trench; an electrically conductive polysilicon inner plate filling regions of the trench not filled by the liner; an electrically conductive doped outer plate in the substrate surrounding the sidewalls and the bottom of the trench; a doped silicon region in the substrate; a first electrically conductive metal silicide layer on a surface region of the doped silicon region exposed at the top surface of the substrate; a second electrically conductive metal silicide layer on a surface region of the inner plate exposed at the top surface of the substrate; and an insulating ring on the top surface of the substrate between the first and second metal silicide layers.

REFERENCES:
patent: 6448610 (2002-09-01), Weis
patent: 7067372 (2006-06-01), Schrems et al.
Notice of Allowance (Mail Date Nov. 18, 2009) for U.S. Appl. No. 11/872,787, filed Oct. 16, 2007; Confirmation No. 9514.
Office Action (Mail Date: Jul. 16, 2009) for U.S. Appl. No. 11/872,787, filed Oct. 16, 2007; Confirmation No. 9514.

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