Deep mesa process for fabricating monolithic integrated Schottky

Details Deep mesa process for fabricating monolithic integrated Schottky Deep mesa process for fabricating monolithic integrated Schottky

1983-08-15

1985-02-19

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 29591, 148175, 156647, 156649, 156653, 1566591, H01L 2120, H01L 21302

Patent

active

044996560

ABSTRACT:
A method of fabricating gallium arsenide devices in which contact isolation is provided by a deep mesa step structure. Step coverage of deposited conductive films is facilitated by preferential orientation of the non-centrosymmetric crystal substrate and wet anisotropic etching that provides a sloped step. Problems of fine line definition of the Schottky anode contact in the photolithographic process are addressed by a two-step exposure of a single layer of thick photoresist followed by a chlorobenzene soak prior to development that ensures a retrograde resist profile needed for good lift-off of undesired evaporated metal. Mesas as deep as 7 .mu.m have been obtained, which permit the fabrication of monolithic planar mixer millimeter-wave diodes with low series resistance and reduced parasitic capacitance.

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Shaw, D. W., J. Electrochem Soc., SSST, Apr., 1981, pp. 874-879.

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