Deep junction SOI MOSFET with enhanced edge body contacts

Details Deep junction SOI MOSFET with enhanced edge body contacts Deep junction SOI MOSFET with enhanced edge body contacts

2006-11-29

2009-06-23

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S479000, C257S347000, C257SE21411, C257SE29273

Reexamination Certificate

active

07550330

ABSTRACT:
A semiconductor structure is provided that has body contacts that are located at the edges of the device channel and a buried insulating region under the device channel that is shallower than the buried insulating regions under the source/drain junctions. A method of forming such a semiconductor structure is also described. The inventive method provides for self-alignment of the various features mentioned above with the gate conductor of the structure.

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