Deep groove structure for semiconductors

Details Deep groove structure for semiconductors Deep groove structure for semiconductors

1997-08-12

2000-02-15

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438700, G01L 900, G01L 908, H01L 21465

Patent

active

06025209&

ABSTRACT:
Deep groove structure for semiconductors comprising a semiconductor substrate, a groove or a cavity formed in said semiconductor substrate and a suspending glass membrane formed on the groove or deep cavity, prepared by a flame hydrolysis deposition process. The suspending glass membrane functions as a planarization structure and has surface at the same level of the surface of the semiconductor substrate. The present invention also discloses a method to prepare the deep groove structure.

REFERENCES:
patent: 4989059 (1991-01-01), Micheels et al.
patent: 5316965 (1994-05-01), Philipossian et al.
patent: 5471552 (1995-11-01), Wuu et al.
patent: 5578528 (1996-11-01), Wuu et al.
patent: 5600745 (1997-02-01), Wuu et al.
Huff, Michael et al., "Design of Sealed Cavity Microstructures Formed by Silicon Wafer Bonding", Journal of Microelectromechanical systems, vol. 2, No. 2, pp. 74-81, Jun. 1993.

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