Metal treatment – Compositions – Heat treating
Patent
1976-05-03
1977-06-28
Ozaki, G.
Metal treatment
Compositions
Heat treating
148171, 148172, 148186, 148187, 148188, 252 623GA, 252 623E, 357 38, 357 60, 357 89, 357 90, 148177, 148179, H01L 21225
Patent
active
040323641
ABSTRACT:
A semiconductor controlled rectifier has a lamellar body of semiconductor material of at least one group of four alternate first and second regions of opposite type conductivity. The second regions are made from recrystallized semiconductor material of the first regions and contain a sufficient level of concentration of a dopant impurity to impart thereto the opposite type conductivity. It is recrystallized material with solid solubility of the impurity therein. The controlled rectifier is turned on and off by either a control electrode or a source of illumination.
REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3727116 (1973-04-01), Thomas et al.
patent: 3737741 (1973-06-01), Bartelink et al.
patent: 3901736 (1975-08-01), Anthony et al.
patent: 3936319 (1976-02-01), Anthony et al.
patent: 3956024 (1976-05-01), Cline et al.
patent: 3956026 (1976-05-01), Cline et al.
Anthony Thomas R.
Cline Harvey E.
Cohen Joseph T.
General Electric Company
Ozaki G.
Squillaro Jerome C.
Winegar Donald M.
LandOfFree
Deep diode silicon controlled rectifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Deep diode silicon controlled rectifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deep diode silicon controlled rectifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1519486