Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Patent
1997-04-17
1999-09-14
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
H01L 2166
Patent
active
059535814
ABSTRACT:
As a method for manufacturing a laser diode using a group III nitride compound semiconductor, independent dry etching process for forming electrodes and mirror facets are adopted. A portion of an upper semiconductor layer is etched for forming a window. An electrode for a lower semiconductor layer is formed through the window. After electrodes are formed, then, etching is carried out for forming mirror facets of laser cavity. This method realizes high oscillation, because the method enhances parallel and vertical degrees of the mirror facets. Further, cleanness of the mirror facets are improved, because they are formed after the electrodes are formed. The method further lowers resistivity of lower semiconductor layer, because its thickness can be controlled easily without etching excessively. As a result, luminous efficiency is improved.
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Nakamura et al. "InGaN Multi-Quantum-Well-Structure Laser Diodes", Japanese Journal of Applied Physics. vol. 35, 1996, pp. L217-220.
Koike Masayoshi
Nagai Seiji
Yamasaki Shiro
Chaudhari Chandra
Thompson Craig
Toyoda Gosei Co,., Ltd.
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