Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-04-04
1995-08-29
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257446, 257463, 257443, H01L327146, H01L 31107
Patent
active
054463084
ABSTRACT:
A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of n type wells in the block surrounded by a foundation of p type semiconductor material. Each n type well is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the n type material in the well and the p type material foundation. The n type semiconductor material in each well has a substantially constant concentration of n type dopant throughout the n type material; the concentration of p type dopant in the foundation has a positive gradient extending from the p-n junction towards the second surface such that the peak surface electric field of the p-n junction in each well is less than the bulk electric field of the same p-n junction.
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V. L. Gelezunas et al., "Uniform Large-Area High-Gain Silicon Avalanche Radiation Detectors From Transmutation Doped Silicon," American Institute of Physics, 1977, pp. 118-120.
Sze, S. M., "Physics of Semiconductor Devices," John Wiley, New York, 1981, pp. 783-787.
Castleberry Donald E.
Ishaque Ahmad N.
Menditto Peter
Piccone Dante E.
Rougeot Henri M.
General Electric Company
Ingraham Donald S.
Jackson Jerome
Snyder Marvin
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