Method of fabricating a Schottky barrier contact

Details Method of fabricating a Schottky barrier contact Method of fabricating a Schottky barrier contact

1979-05-29

1982-02-02

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

148187, 148191, 427 89, 427 90, 427 93, H01L 21225, H01L 2948

Patent

active

043139710

ABSTRACT:
A Schottky barrier contact is formed by depositing the conductor portion of the Schottky barrier contact on a surface of a semiconductor from which a conductivity determining dopant has been leached to create a surface region of reduced dopant concentration. This process is compatible with the formation of an ohmic contact to an increased conductivity portion of the semiconductor material, an unleached portion of the semiconductor material or to a leached portion of the semiconductor material.

REFERENCES:
patent: Re28385 (1975-04-01), Mayer
patent: 3143443 (1964-08-01), Maserjian
patent: 3193419 (1965-07-01), White
patent: 3588633 (1971-06-01), Hayden
patent: 3706128 (1972-12-01), Heer
patent: 3849789 (1974-11-01), Cordes
patent: 3943552 (1976-03-01), Shannon
patent: 3964084 (1976-06-01), Andrews
patent: 4045248 (1977-08-01), Shannon
patent: 4110488 (1978-08-01), Risko
patent: 4173063 (1979-11-01), Kniepkamp
Statz, "Fabricating Field Effect Transistors", IBM TDB vol. 11, No. 4, Sep. 1968, p. 397.

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