Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-02-10
2008-12-23
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257S642000
Reexamination Certificate
active
07468329
ABSTRACT:
The present invention relates to a method of dedoping an organic semiconductor comprising the step of contacting a doped organic semiconductor with a compound of formula (1):wherein R1-R8each independently represents a hydrogen atom or a C1-C6alkyl group which may be linear or branched and which may be optionally substituted with one or more hydroxyl groups and/or one or more halogen atoms and/or a C1-C3alkoxy group;one or more pairs of R groups which are not hydrogen may join to form a cyclic group according to the following pairings:R1and R2;R2and R3;R3and R4;R4and R5;R5and R6;R6and R7;R7and R8; andR8and R1.
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Kugler Thomas
Li Shunpu
Newsome Christopher
Russell David
Lee Calvin
Oliff & Berridg,e PLC
Seiko Epson Corproation
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