Decoupling capacitors and semiconductor integrated circuit

Details Decoupling capacitors and semiconductor integrated circuit Decoupling capacitors and semiconductor integrated circuit

2007-06-05

2007-06-05

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257SE29345

Reexamination Certificate

active

11003384

ABSTRACT:
VSS302is provided to a gate portion304and VDD301is provided to a source portion305and a drain portion306of a MOS transistor which constitutes a decoupling capacitor, and a potential NWVDD303different from that provided to the source portion305and the drain portion306is provided to a substrate portion307. If NWVDD303is set higher than VDD301, a depletion layer309is spread, so that a leakage current can be reduced instead of reducing a capacitance of the decoupling capacitor. In addition, if NWVDD303is set lower than VDD301so as not to cause latchup, the depletion layer309is reduced, so that the capacitance of the decoupling capacitor can be increased. By changing the potential NWVDD303provided to the substrate portion307, a capacitance value and a leakage current value of the decoupling capacitor can be controlled. Thereby making it possible to achieve a decoupling capacitor capable of controlling the capacitance value and the leakage current value and also having excellent response characteristics.

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