Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2011-02-08
2011-02-08
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257SE23174, C257SE21598
Reexamination Certificate
active
07884458
ABSTRACT:
A decoupling capacitor, a wafer stack package including the decoupling capacitor, and a method of fabricating the wafer stack package are provided. The decoupling capacitor may include a first electrode formed on an upper surface of a first wafer, a second electrode formed on a lower surface of a second wafer, and an adhesive material having a high dielectric constant and combining the first wafer with the second wafer. In the decoupling capacitor the first and second electrodes operate as two electrodes of the decoupling capacitor, and the adhesive material operates as a dielectric of the decoupling capacitor.
REFERENCES:
patent: 6943294 (2005-09-01), Kang et al.
patent: 2002/0025623 (2002-02-01), Yamamichi et al.
patent: 2004/0251529 (2004-12-01), Lee et al.
patent: 2005-340555 (2005-12-01), None
patent: 2000-0053364 (2000-08-01), None
patent: 2006-0026434 (2006-03-01), None
English language abstract of Japanese Publication No. 2005-340555.
English language abstract of Korean Publication No. 2006-0026434.
Baek Seung-Duk
Kang Sun-Won
Andújar Leonardo
Muir Patent Consulting, PLLC
Samsung Electronics Co,. Ltd.
LandOfFree
Decoupling capacitor, wafer stack package including the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Decoupling capacitor, wafer stack package including the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Decoupling capacitor, wafer stack package including the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2634542