Decoupling capacitor density while maintaining control over...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

Other Related Categories

C257S071000, C257S296000, C257S053000, C257SE27016, C257SE29346, C257SE27092

Type

Reexamination Certificate

Status

active

Patent number

11174713

Description

ABSTRACT:
In one embodiment, a method of controlling the across-chip line-width variation (ACLV) on a semiconductor integrated circuit includes forming an ACLV controlled region including a plurality of semiconductor devices each having a gate structure and arranging the plurality of semiconductor devices to have a substantially uniform spacing between each gate structure. The method also includes forming a decoupling capacitor region adjacent to the ACLV controlled region. The decoupling capacitor region may include a plurality of capacitor structures each having a conductive structure, such as a polysilicon electrode, for example.

REFERENCES:
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patent: 5636133 (1997-06-01), Chesebro
patent: 5923563 (1999-07-01), Lavin
patent: 6323113 (2001-11-01), Gabriel
patent: 2004/0073881 (2004-04-01), Nassif et al.
patent: 2005/0057286 (2005-03-01), Shepard et al.
patent: 2005/0114820 (2005-05-01), Restle
patent: 2006/0124982 (2006-06-01), Ho et al.
Dreibelbis, et al, “The Hidden Benefits of IBM ASICs: Part 1”,IBM Microelectronics, IBM, Third Quarter 2000, vol. 6, No. 3.

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