Decoupling capacitor density while maintaining control over...

Details Decoupling capacitor density while maintaining control over... Decoupling capacitor density while maintaining control over...

2008-01-01

2008-01-01

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S071000, C257S296000, C257S053000, C257SE27016, C257SE29346, C257SE27092

Reexamination Certificate

active

11174713

ABSTRACT:
In one embodiment, a method of controlling the across-chip line-width variation (ACLV) on a semiconductor integrated circuit includes forming an ACLV controlled region including a plurality of semiconductor devices each having a gate structure and arranging the plurality of semiconductor devices to have a substantially uniform spacing between each gate structure. The method also includes forming a decoupling capacitor region adjacent to the ACLV controlled region. The decoupling capacitor region may include a plurality of capacitor structures each having a conductive structure, such as a polysilicon electrode, for example.

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Dreibelbis, et al, “The Hidden Benefits of IBM ASICs: Part 1”,IBM Microelectronics, IBM, Third Quarter 2000, vol. 6, No. 3.

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