Static information storage and retrieval – Read/write circuit – Including specified plural element logic arrangement
Reexamination Certificate
2007-11-27
2007-11-27
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including specified plural element logic arrangement
C365S230020, C365S190000
Reexamination Certificate
active
11363366
ABSTRACT:
A memory circuit includes a number of bit line structures, each including at least three bit lines; a number of word lines that intersect with the bit line structures at a number of sites; and a number of switching devices located at the sites. A number of column sense logic units are also provided, corresponding to the bit line structures. Each of the column sense logic units includes a first logic gate and a second logic gate. The first logic gate has a first input connected with a first one of the bit lines and a second input connected with a second one of the bit lines. The second logic gate has a first input interconnected with a third one of the bit lines, and a second input interconnected with the second one of the bit lines.
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Dudeck Dennis E.
Evans Donald A.
Pham Hai Q.
Werner Wayne E.
Wozniak Ronald J.
Agere Systems Inc.
Le Thong Q.
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