Decoding circuit arrangement for redundant semiconductor storage

Static information storage and retrieval – Read/write circuit – Bad bit

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365 96, 365189, 365210, 365241, G11C 1300

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048112984

ABSTRACT:
A decoding process and a decoding circuit arrangement for a redundant semiconductor memory is described, wherein the advantages of parallelly selecting non-defective word lines and redundant word lines at a low level are utilized for the writing as well as for the reading current in such a manner that high speed reading and writing is not affected. This is achieved in that the decoder for the redundant word lines consists of a comparator circuit and fuse-controlled switches, and that the input addresses are applied to a conventional address decoder as well as to the comparator circuit. The output of the comparator circuit is directly connected to the input of a first driver circuit for the redundant word line, and furthermore to an OR circuit which is also controlled by a read/write control circuit, and which is connected to the decoder and to a clamp circuit that is directly connected to the input of a second word line driver circuit, and continuously maintains the potential following a deselect signal applied on that level, which requires a minimum of power.

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IBM Tech. Disc. Bulletin, L. M. Terman, vol. 25, No. 4, Sep. '82, pp. 2135-2136.
IBM Tech. Disc. Bulletin, H. P. Schlaeppi, vol. 7, No. 9, Feb. '65, p. 808.

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