Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-10-25
2005-10-25
Phung, Anh (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280
Reexamination Certificate
active
06958938
ABSTRACT:
A data writing method for a semiconductor memory device includes writing data into the first memory cell, rewriting the data into the first memory cell when an insufficiency of the data of the first memory cell is determined as a result of verifying the data of the first memory cell at one first reference threshold voltage, writing data into the second memory cell following writing the data into the first memory cell, and rewriting the data into the first memory cell following writing the data into the second memory cell when an insufficiency of the data of the first memory cell is determined as a result of verifying the data of the first memory cell at one second reference threshold voltage. The first reference threshold voltage is set to be different from the second reference threshold voltage.
REFERENCES:
patent: 4656610 (1987-04-01), Yoshida et al.
patent: 5452249 (1995-09-01), Miyamoto et al.
patent: 5835436 (1998-11-01), Ooishi
patent: 6091640 (2000-07-01), Kawahara et al.
patent: 6467056 (2002-10-01), Satou et al.
patent: 6496418 (2002-12-01), Kawahara et al.
patent: 6512702 (2003-01-01), Yamamura et al.
patent: 6563746 (2003-05-01), Fujioka et al.
patent: 6574147 (2003-06-01), Tanaka et al.
patent: 6580638 (2003-06-01), Conley et al.
patent: 6646920 (2003-11-01), Takashina et al.
patent: 6760255 (2004-07-01), Conley et al.
patent: 6809967 (2004-10-01), Noguchi et al.
patent: 6868032 (2005-03-01), Kozakai et al.
patent: 1216388 (1999-05-01), None
patent: 7-182886 (1995-07-01), None
patent: 10-222989 (1998-08-01), None
patent: 2000-76872 (2000-03-01), None
patent: 2000-276887 (2000-10-01), None
patent: 2000-0023177 (2000-04-01), None
patent: 10-0282026 (2001-02-01), None
Goda Akira
Noguchi Mitsuhiro
Takeuchi Yuji
Kabushiki Kaisha Toshiba
Oblon, Spivak, McCelland, Maier & Neustadt, P.C.
Phung Anh
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