Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-03-22
2005-03-22
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280
Reexamination Certificate
active
06870773
ABSTRACT:
A semiconductor memory device includes a first memory cell block capable of rewriting data and having at least one first memory cell, and a second memory cell block capable of rewriting data and having at least one second memory cell adjoining the first memory cell. A data writing method for the semiconductor memory device includes writing data into the first memory cell, writing data into the second memory cell following writing the data into the first memory cell, verifying the data of the first memory cell after writing the data into the second memory cell, and rewriting the data into the first memory cell when insufficiency of the data of the first memory cell as a result of verifying the data of the first memory cell.
REFERENCES:
patent: 5452249 (1995-09-01), Miyamoto et al.
patent: 5835436 (1998-11-01), Ooishi
patent: 6091640 (2000-07-01), Kawahara et al.
patent: 6467056 (2002-10-01), Satou et al.
patent: 6496418 (2002-12-01), Kawahara et al.
patent: 6512702 (2003-01-01), Yamamura et al.
patent: 6563746 (2003-05-01), Fujioka et al.
patent: 6574147 (2003-06-01), Tanaka et al.
patent: 6580638 (2003-06-01), Conley et al.
patent: 6646920 (2003-11-01), Takashina et al.
patent: 6760255 (2004-07-01), Conley et al.
patent: 7-182886 (1995-07-01), None
patent: 10-222989 (1998-08-01), None
patent: 2000-76872 (2000-03-01), None
patent: 2000-276887 (2000-10-01), None
patent: 2000-0023177 (2000-04-01), None
patent: 10-0282026 (2001-02-01), None
Jue-Hsien Chern, et al., “Multilevel Metal Capacitance Models for CAD Design Synthesis Systems”, IEEE Electron Device Letters, vol. 13, No. 1, Jan. 1992, pp.:32-34.
Goda Akira
Noguchi Mitsuhiro
Takeuchi Yuji
Elms Richard
Kabushiki Kaisha Toshiba
Nguyen Tuan T.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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