Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-01-02
2007-01-02
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S157000
Reexamination Certificate
active
11052810
ABSTRACT:
A data write method of a magnetic random access memory including a magnetoresistive element which has axis of easy and hard magnetizations, a first write wiring which runs in a direction of the axis of easy magnetization, and a second write wiring which runs in a direction of the axis of hard magnetization, includes a first phase of supplying a first current to the first write wiring in a first direction and supplying a second current to the second write wiring in a second direction, a second phase of stopping supplying the first current to the first write wiring and supplying the second current to the second write wiring in the second direction, and a third phase of supplying the first current to the first write wiring in a third direction reverse to the first direction and supplying the second current to the second write wiring in the second direction.
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Kabushiki Kaisha Toshiba
Le Thong Q.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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