Data write in control circuit for toggle magnetic random...

Details Data write in control circuit for toggle magnetic random... Data write in control circuit for toggle magnetic random...

2007-12-28

2009-06-30

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S189070, C365S189160, C365S171000

Reexamination Certificate

active

07554836

ABSTRACT:
A data write in control circuit for magnetic random access memory is configured with a first transistor, a second transistor connected to the first transistor, a transmission gate connected to the first transistor, a comparator having two input terminal connected to the first transistor, a storage capacitor having one end connected to the first transistor and the other end connected to a power source or a ground, and a logic circuit having one end connected to the output terminal of the comparator and the other end receiving data to be written in.

REFERENCES:
patent: 6504750 (2003-01-01), Baker
patent: 2009/0010088 (2009-01-01), Chen et al.
Noboru Sakimura et al., A 512Kb Cross-Point Cell MRAM, ISSCC/2003/Session 16/Non-Volatile Memory/Paper 16.1, 2003 IEEE International Solid-State Circuits Conference, 8 pages, 2003.
Gitae Jeong et al., A. 0.24-um 2.0-V 1T1MTJ 16-kb Nonvolatile Magnetoresistance RAM With Self-Reference Sensing Scheme, IEEE Journal of Solid Circuits, Nov. 2003, 1906-1910, vol. 38, No. 11.

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