Data transmitter

Details Data transmitter Data transmitter

2001-11-19

2003-06-03

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Read/write circuit

Signals

C365S194000, C327S393000, C326S086000

Reexamination Certificate

active

06574154

ABSTRACT:

BACKGROUND OF THE INVENTION
This invention relates to a data transmitter for transmitting parallel data; and, more particularly, the invention relates to a data transmitter suited for transmitting data at high speeds in a memory system.
PRIOR ART
In the devices for transmitting data at high speeds, the data propagation delay time through the transmission paths is increasing to such a degree that is no longer negligible relative to the data transmission period. A device that must transmit data at high speeds can be represented by a memory system which comprises a microprocessor (MPU), a memory controller LSI and a plurality of memory modules, and is used in a personal computer. Each memory module mounts a plurality of synchronous DRAMs (SDRAMs) which are memory chips. When data is to be read out in this memory system, the SDRAM on the memory module works as a driver for transmitting data, and the memory controller works as a receiver for receiving the data.
The memories at the same positions on the memory modules share a data signal wiring on a bus. In this case, the wiring length differs between a memory module and the memory controller LSI when the data is read out from the SDRAM on a memory module closer to the memory controller LSI and from the SDRAM on a memory module more distant from the memory controller LSI. When the memory controller LSI reads out data from the SDRAM of the distant memory module, therefore, the arrival of data is delayed by a difference in the propagation delay time between the two memory modules as compared to when the data is read out from the SDRAM of the closer memory module.
Thus, when the receiver receives the data by using a reference signal of a predetermined timing relative to the signals arriving at timings that differ depending on the positions of the modules, the effective time of the data decreases making it no longer possible to maintain a setup time for receiving data and a holding time.
This problem can be solved by, for example, a method disclosed in Japanese Patent Laid-Open No. 157030/1991. According to this method, the driver that produces data sends, together with data signals, reference signals for receiving the data to absorb differences in the transmission delay time.
FIGS. 3A and 3B
schematically illustrate typical memory modules having a data bit width of 64 bits as used in the above memory system, wherein
FIG. 3A
shows a memory module mounting four SDRAMs of ×16 bit output, and
FIG. 3B
shows a memory module mounting 16 SDRAMs of ×4 bit output. Here,
FIG. 3B
shows only one surface of the memory module.
The two memory modules of
FIGS. 3A and 3B
employ a uniform pin arrangement, and have data signals DQi (i=0 to 63), signals CLKj (j=0 to 3) used as a reference for writing data from the memory controller LSI into the SDRAM, and reference signals DQSj (j=0 to 3) used for reading data from the SDRAM into the memory controller LSI, each of which is four in number. The data signal DQi consists of 64 bits and, hence, the reference signals CLKj and DQSj each receive 16 data signals as a reference.
Hereinafter, the reference signals CLK
0
and DQS
0
are used to write and read data signals DQ
0
to DQ
15
as a reference, respectively; the reference signals CLK
1
and DQS
1
are used to write and read data signals DQ
16
to DQ
31
as a reference, respectively; the reference signals CLK
2
and DQS
2
are used to write and read data signals DQ
32
to DQ
47
as a reference, respectively; and reference signals CLK
3
and DQS
3
are used to write and read data signals DQ
48
to DQ
63
as a reference, respectively.
Here, in the memory module of
FIG. 3A
, four SDRAMs are mounted and, hence, the reference signals and the corresponding
16
data signals are connected to the same SDRAM. in the memory module
6
f
FIG. 3B
, on the other hand, 16 SDRAMs are mounted and, hence, the reference signals CLK
1
are branched into four areas on the memory module to distribute signals to each of the SDRAMs. The reference signal DQSj is representatively used as a reference for receiving data of four chips from an SDRAM.
FIG. 4A
illustrates, in a simplified manner, an example of a driver DRV on a module which transmits signals while bringing the data signals DQi (i=A, B, C) into phase with the reference signals CLK for receiving the data, and the receiver RCV receives the data by delaying the phase of the reference signals CLK by one-half period (T/2).
FIG. 4B
is a timing diagram of the relevant signals.
Here, reference numerals
401
,
402
and
403
denote flip-flops for determining the output phases of the signals DQA, DQB, DQC, reference numerals
411
,
412
,
413
and
414
denote output buffers for the signals DQA, DQB, DQC, CLK, and reference numerals
421
,
422
,
423
and
424
denote signal wirings for connecting the driver to the receiver and comprise a bus between the memory module and the memory controller LSI. Reference numerals
431
,
432
,
433
and
434
denote input buffers for the signals in the receiver, and reference numerals
441
,
442
and
443
denote flip-flops for receiving the transmitted data.
The driver having data signals DQi (i=A, B, C) and reference signals CLK to be transmitted may be in the form of, for example, a single chip as shown in
FIG. 3A
or it may be constituted by a plurality of different chips like signals DQS in FIG.
3
B. In eith
6
r case, the difference in the length of the transmission paths to the memory modules can be absorbed by transmitting reference signals for receiving data simultaneously With the transmission of data signals as disclosed in Japanese Patent Laid-Open No. 157030/1991.
For this purpose, however, the wirings
421
to
424
for the data signals and reference signals must have an equal length, and their loads must be equalized. if the wirings having an equal length and an equal load have been realized between the data signals and the reference signals that are transmitted in parallel, the relationship of phase between the data signals DQA to DQC in the flip-flops
401
to
403
and the clock signals CLK in the driver DRV will be maintained so as to be relatively the same even after they have passed through the input buffers
431
to
434
in the receiver RCV as shown in the timing diagram of FIG.
4
B.
Therefore, the reference signals and the data signals transmitted from the driver at the same timings arrive at the receiver all at the same timing irrespective of the wirings
421
to
424
between the driver and the receiver, i.e., irrespective of the lengths of the transmission paths between the memory controller LSI and the memory module. When the receiver receives the data using the reference signals, the setup time (tDS)
451
and the holding time (tDH)
452
can be maintained to a sufficient degree.
As another example, Japanese Patent Laid-open No. 75594/1993 discloses a parallel bit synchronizing system comprising a training data generating circuit and a selector for changing the normal data and the training data over to each other in response to a training mode signal on the data transmission side, a bit phase synchronizing circuit that operates in the training mode to automatically synchronize the phase among the bit data, and an inter-bit phase synchronizing circuit connected to the bit phase synchronizing circuit to automatically synchronize the phases among the bit data on the data receiving side.
According to the above first example in which the driver transmits the reference signals together with the data signals, however, there exists a region
501
on the printed board or on the memory module board where it is not allowed to lay wiring, as shown in FIG.
5
A. Therefore, it often becomes difficult to maintain an equal length of the wirings for the reference signals CLK and the data signals DQA to DQC. Even if the wirings of an equal length could be realized, the presence of parasitic capacitance due to the wirings running in parallel with other wirings or crossing other wirings and the dispersion of processes amon

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