Data transfer circuit in a memory device

Static information storage and retrieval – Systems using particular element – Capacitors

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Details

36523005, 365154, 365203, 36523009, G11C 1124

Patent

active

057681783

ABSTRACT:
A transfer circuit and method are described for transferring data between a static memory and a dynamic memory. The static memory is a Serial Access Memory, SAM, and the dynamic memory is a Dynamic Random Access Memory, DRAM. The transfer circuit includes a single transfer line selectively coupled to both memories. The static memory and the single transfer line can be pre-charged, or equilibrated to a predetermined voltage level. Transfers of data are performed by coupling a memory cell to the single transfer line so that the transfer line voltage is changed from the predetermined voltage level and then coupled to another memory cell.

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"VRAM--256L.times.8 DRAM with 512.times.8 SAM", Specialty DRAM--Graphics/Communications 1993 Data Book; Micron Semiconductor, Inc.; pp. 2-139--2-180 (1993).

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