Data storage element and method for reading data therefrom

Details Data storage element and method for reading data therefrom Data storage element and method for reading data therefrom

1996-04-01

1997-04-15

Nguyen, Tan T.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365210, G11C 1124

Patent

active

056216807

ABSTRACT:
A non-volatile memory unit (10) includes a memory cell (13) and a reference cell (20). The memory cell (13) includes a ferroelectric memory capacitor (14), which is polarized to store a logic data. The reference cell (20) includes two ferroelectric reference capacitors (25, 26) which are in polarization states (51, 52) complementary to each other. The capacitance of the reference capacitor (25, 26) tracks the capacitance of the memory capacitor (14). When reading data from the memory unit (10), an extraction signal (19A) generates a data voltage depending on the data stored in the memory unit (10), and a reference extraction signal (39A) generates a reference voltage through the reference capacitors (25, 26). A sense amplifier (42) senses the data voltage and the reference voltage, thereby reading data from the memory unit (10).

REFERENCES:
patent: 4545036 (1985-10-01), Segers
patent: 4669065 (1987-05-01), Ohsawa
patent: 4734890 (1988-03-01), Miyatake et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5297084 (1994-03-01), Ban
Tatsumi Sumi et al., Integrated Ferroelectrics, "Integrated Ferroelectric Nonvolatile Memory Technology for 1T/1C Cell with 100ns Read/Write Time at 3V", 1995, vol. 6, pp. 1-13.

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