Data storage element and memory structures employing same

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

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Details

Other Related Categories

365181, 36518902, 36523002, 36523005, G11C 1134, G11C 700, G11C 800

Type

Patent

Status

active

Patent number

048827061

Description

DESCRIPTION:

BRIEF SUMMARY
The present invention relates to electrical data storage elements.
An electrical data storage element is, at present, a device capable of being placed in one of two possible conditions by a stimulus applied by way of control ports and which will retain the selected condition after the removal of the stimulus. After being set to the selected condition, the electrical data storage element is regarded as storing data represented by the stimulus. The data represented by the stimulus may be retrieved from the data storage element by determining its condition. The electrical data storage element may be such that the selected condition is reversible, in which case its data may be altered any number of times, or the selected condition may be irreversible, in which case its data cannot be altered.
A known electrical data storage element the data in which is alterable includes electrical charge storage means connectible, by means of switch means, to a first of two address lines which represent the coordinates of the storage element, the other of the two address lines being arranged to permit closure of the switch means to connect the charge storage means to the first address line. Sensing of the condition of the storage element is performed by means of a sensing amplifier for sensing the condition of storage means by way of the first address line with the switch means closed.
The known electrical data storage element is subject to various difficulties, including, for example, sensing reliably the relatively small charge on the storage element at a remote position in the presence of noise and other electrical disturbances in and around the sensing amplifier.
The present invention provides an electrical data storage element which provides for alteration of its stored data and which avoids at least the sensing difficulty encountered in known electrical data storage elements.
In accordance with the present invention, an electrical data storage element which provides for alteration of its stored charge, includes electrical charge storage means arranged to so control switch means by way of one of first and second control ports of the switch means such that the switch means assumes a first state when the charge on the charge storage means lies within a first range and the switch means assumes a second state when the charge on the charge storage means lies within a second range which excludes the first range, a first address line connected to a first region of the switch means, a second address line connected to the charge storage means, and a data line connected to a second region of the switch means, so that, in operation, the data to be held by the data storage element is written into it as a charge set on the charge storage means by signals applied to the data storage element by way of the address lines and the data line, and the data held by the data storage element is read by sensing the state of the switch means by way of the first address line and the data line.
More specifically, the electrical data storage element includes switch means arranged as interconnected first and second switch elements and including first and second control ports for effecting combined operation of the first and second switch elements resulting in the switch means assuming its closed circuit condition, a first address line connected to the first switch element, a second address line, the electrical charge storage means connected between the first control port and the second address line, and, the data line connected to the second switch element, so that in operation, the charge condition of the charge storage means is set by independent control of the switch elements by way of the first address line and the data line in writing data into the data storage element, the charge condition of the charge storage means being effective to cause the switch means to assume its closed circuit condition or to remain open circuit when the data storage element is read, the condition of the switch means being sensed by way of the first address line and t

REFERENCES:
patent: 3697962 (1972-10-01), Beausoleil et al.
patent: 3715732 (1973-02-01), Lynes
patent: 3729719 (1973-04-01), Wiedmann
patent: 3753248 (1973-08-01), Lynes
patent: 3876992 (1975-04-01), Pricer
patent: 3992703 (1976-11-01), Luisi et al.
patent: 4037243 (1977-07-01), Hoffman et al.
patent: 4181981 (1980-01-01), El-Kareh et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 9, 2/78, "Single-Device DC Stable Memory Cell", S. D. Malaviya, pp. 3492-3494.
IBM Technical Disclosure Bulletin, vol. 22, No. 1, 6/1979, "Integrated Static SCR Memory Cell", H. D. Varadarajan, R. T. Farley, pp. 135-136.

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