Data restore in thryistor based memory devices

Details Data restore in thryistor based memory devices Data restore in thryistor based memory devices

2007-07-17

2007-07-17

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Negative resistance

C365S175000, C365S187000

Reexamination Certificate

active

11194184

ABSTRACT:
In a thyristor based memory cell, one end of a reversed-biased diode is connected to the cathode of the thyristor. During standby, the second end of the diode is biased at a voltage that is higher than that at the cathode of the thyristor. During restore operation, the second end is pulled down to zero or even a negative value. If the cell is storing a “1,” the voltage at the thyristor cathode can be approximately 0.6 volt at the time of the pull down. The large forward-bias across the diode pulls down the thryistor cathode. This causes the thyristor to be restored. If the cell is storing a “0,” the voltage at the thyristor cathode can be approximately zero volt. The small or zero forward-bias across the diode is unable to disturb the “0” state. As a result, the memory cell is restored to its original state.

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