Data restore in thryistor based memory devices

Details Data restore in thryistor based memory devices Data restore in thryistor based memory devices

2005-09-13

2005-09-13

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Negative resistance

C365S175000, C365S187000

Reexamination Certificate

active

06944051

ABSTRACT:
In a thyristor based memory cell, one end of a reversed-biased diode is connected to the cathode of the thyristor. During standby, the second end of the diode is biased at a voltage that is higher than that at the cathode of the thyristor. During restore operation, the second end is pulled down to zero or even a negative value. If the cell is storing a “1,” the voltage at the thyristor cathode can be approximately 0.6 volt at the time of the pull down. The large forward-bias across the diode pulls down the thryistor cathode. This causes the thyristor to be restored. If the cell is storing a “0,” the voltage at the thyristor cathode can be approximately zero volt. The small or zero forward-bias across the diode is unable to disturb the “0” state. As a result, the memory cell is restored to its original state.

REFERENCES:
patent: 3918033 (1975-11-01), Case et al.
patent: 4031412 (1977-06-01), Ohhinata et al.
patent: 4829357 (1989-05-01), Kasahara
patent: 4864168 (1989-09-01), Kasahara et al.
patent: 5099300 (1992-03-01), Baliga
patent: 5535156 (1996-07-01), Levy et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6462359 (2002-10-01), Nemati et al.
patent: WO 02/082453 (2002-10-01), None
patent: WO 02/082504 (2002-10-01), None
patent: WO 02/082504 (2002-10-01), None

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