Data readout circuit and semiconductor device having the same

Details Data readout circuit and semiconductor device having the same Data readout circuit and semiconductor device having the same

2007-02-13

2007-02-13

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S149000, C365S205000

Reexamination Certificate

active

11100913

ABSTRACT:
A data readout circuit for reading memory data from a resistance change memory disposed at a point where a bit line and a word line intersect by setting a potential of the bit line to a predetermined bias potential and detecting a current value flowing in the resistance change memory, includes a capacitance device connected to the bit line via a switching device; and a current supply circuit connected to both ends of the switching device to provide a current to the bit line such that the potential of the bit line is equal to a potential of the capacitance device.

REFERENCES:
patent: 6067253 (2000-05-01), Gotou
patent: 6434065 (2002-08-01), Kobayashi et al.

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