Data read method of magnetic random access memory

Details Data read method of magnetic random access memory Data read method of magnetic random access memory

2007-01-16

2007-01-16

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S063000

Reexamination Certificate

active

11244052

ABSTRACT:
A data read method of a magnetic random access memory including a first wiring which runs in a first direction, a plurality of second wirings which run in a second direction different from the first direction, and a plurality of magnetoresistive elements which are arranged at intersections of the first wiring and the second wirings between the first wiring and the second wirings and electrically connected to the first wiring, includes to read out data of a selected element selected from the plurality of magnetoresistive elements, reading a resistance value of the selected element by a second current supplied from the first wiring to the selected element while supplying a first current to a selected wiring selected from the second wirings in correspondence with the selected element.

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Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, ISSCC 2000 Digest of Technical Papers, vol. 43, ISSN 0193-6530, Feb. 7, 8, and 9, 2000; pp. 128-129.

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