Data processing memory circuit having pull-down circuit with...

Static information storage and retrieval – Read/write circuit – With shift register

Reexamination Certificate

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Details

C365S189080, C365S190000, C365S200000

Reexamination Certificate

active

07855924

ABSTRACT:
A memory circuit includes a memory cell, a pair of conducting lines operable to signal the logic state of the memory cell and read circuitry operable to perform a read operation by detecting a voltage level of at least one of the pair of conducting lines. The memory circuit includes a pull-down circuit having an on configuration in which it is operable to pull-down a voltage level of at least one of the pair of conducting lines so as to affect the read operation and an off-configuration in which the pull-down circuit cannot affect the read operation. Control circuitry is configured to control whether the pull-down circuit is in the on configuration or the off configuration. The memory circuit can be incorporated in a data processing apparatus and a method of operating a memory circuit is provided in which a pull-down circuit is controlled to be in an on configuration or in an off configuration.

REFERENCES:
patent: 6370068 (2002-04-01), Rhee
patent: 6452859 (2002-09-01), Shimano et al.
patent: 6882555 (2005-04-01), Fenstermaker et al.

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