Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1991-07-02
1992-10-20
Hudspeth, David
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307443, 307451, H03K 301, H03K 1716
Patent
active
051572796
ABSTRACT:
The data output driver circuit producing high output gain, by controlling the voltage decline caused by body effect produced by a difference between bulk voltage and source voltage in the NMOS transistors connected in series, is disclosed. To obtain such a circuit, the data output driver circuit is provided with a constant voltage means 100 receiving the data from data output buffer and supplying a given voltage to the bulk of first output NMOS transistor 1. Consequently, through the constant voltage circuit 100, the voltage V.sub.cc -V.sub.th equal to the voltage of source of the pull-up transistor 5 is applied to the bulk of the pull-up transistor 5, and in other case, the voltage equal to the voltage between the bulk and the source of the first output transistor 1 is always kept by applying the ground voltage to the bulk of the pull-up transistor. Thus the inventive data output driver has high output gain without the influence caused by body effect. Also the data output driver circuit is applicable to all semiconductor elements and particularly to those semiconductor elements requiring high output gain with potential-low power source voltage.
REFERENCES:
patent: 4529897 (1985-07-01), Suzuki et al.
patent: 4833343 (1989-05-01), Fuchs
Bushnell Robert E.
Hudspeth David
Samsung Electronics Co,. Ltd.
Sanders Andrew
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