Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2006-07-20
2008-10-21
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S189160, C365S230060
Reexamination Certificate
active
07440345
ABSTRACT:
A data output circuit of a semiconductor memory device and an operation method thereof, in which global I/O lines are selectively used according to a selected output data width. The data output circuit includes an I/O sense amplifier unit that selectively senses and amplifies a part or all of read data received from a memory bank through a Local Input and Output (LIO) lines and outputs amplified data to a part of all of Global I/O (GIO) lines, respectively, in response to a data width selection signal, a pipeline latch unit that latches the amplified data received through a part or all of the GIO lines and outputs latched data, in response to latch control signals, and an output driver circuit unit that outputs output data in response to the latched data. The number of the output data is changed according to an output data width selected by the data width selection signal.
REFERENCES:
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Hynix / Semiconductor Inc.
Le Thong Q
Lowe Hauptman & Ham & Berner, LLP
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