Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-07
1997-10-07
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257494, H01L 2976
Patent
active
056751702
ABSTRACT:
A data output buffer is disclosed. Generation of a latch-up is prevented by forming a N-well guard ring to interrupt the movement of minority carriers injected from the drain of NMOS transistor to the N.sup.+ pickup region of PMOS transistor. Accordingly, reliability of the device is improved.
REFERENCES:
patent: 4922317 (1990-05-01), Mihara
patent: 5216294 (1993-06-01), Ryu
patent: 5293060 (1994-03-01), Komori et al.
patent: 5406513 (1995-04-01), Canaris et al.
patent: 5416351 (1995-05-01), Ito et al.
Bowers Courtney A.
Hyndai Electronics Industries Co., Ltd.
Whitehead Jr. Carl W.
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