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Reexamination Certificate

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C257S365000, C257S300000, C257SE27084, C257SE27060, C438S283000, C365S149000

Reexamination Certificate

active

07969776

ABSTRACT:
Disclosed are methods and devices, among which is a device that includes a first semiconductor fin having a first gate, a second semiconductor fin adjacent the first semiconductor fin and having a second gate, and a third gate extending between the first semiconductor fin and the second semiconductor fin. In some embodiments, the third gate may not be electrically connected to the first gate or the second gate.

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