Damascene wiring fabrication methods incorporating...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S620000, C257SE23145

Reexamination Certificate

active

07470616

ABSTRACT:
Methods for fabricating metal wiring layers of a semiconductor device are provided where damascene interconnect structures are formed in a BEOL process that incorporates a dielectric cap-open-first process to achieve hard mask retention and to control the gouging of a buffer oxide layer to prevent exposure of underlying features protected by the buffer oxide layer.

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