Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-05-15
2008-12-30
Baumeister, B William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S620000, C257SE23145
Reexamination Certificate
active
07470616
ABSTRACT:
Methods for fabricating metal wiring layers of a semiconductor device are provided where damascene interconnect structures are formed in a BEOL process that incorporates a dielectric cap-open-first process to achieve hard mask retention and to control the gouging of a buffer oxide layer to prevent exposure of underlying features protected by the buffer oxide layer.
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Akinmade-Yusuff Hakeem S. B.
Kumar Kaushik A.
Lisi Anthony D.
Baumeister B William
Fulk Steven J.
International Business Machines - Corporation
Keusey, Tutunjian & & Bitetto, P.C.
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