Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-07-14
2000-12-05
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438618, 438620, 438622, 438629, H01L 21027
Patent
active
061566403
ABSTRACT:
A method for improving the damascene process window for metallization utilizes an anti-reflective coating to increase the precision of the photolithography process. An inter-layer dielectric and an anti-reflective layer are formed in turn on a semiconductor substrate. The inter-layer dielectric is patterned to form the interconnecting line regions. A conductive layer is then deposited on the semiconductor substrate and fills the interconnecting line regions. The chemical mechanical polish is performed to remove a portion of the conductive layer exceeding the interconnect line regions and simultaneously remove residual portion of said anti-reflective layer.
REFERENCES:
patent: 5990002 (1999-11-01), Niroomand et al.
patent: 6001730 (1999-12-01), Farkas et al.
Huang Yimin
Tsai Meng-Jin
Bowers Charles
Kilday Lisa
United Microelectronics Corp.
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